New 2kV SiC MOSFET in TO-247 Package with Enhanced Safety Features

Infineon Technologies has recently unveiled a groundbreaking development in the realm of power electronics by incorporating a 2kV silicon carbide MOSFET die into its innovative four-lead TO-247PLUS-4-HCC package. This strategic move is aimed at catering to systems with DC links of up to 1.5kV, marking a significant advancement in power semiconductor technology.

According to the company, this new offering represents the first discrete silicon carbide device available on the market with an impressive breakdown voltage of 2,000V. The device boasts a creepage distance of 14mm and a clearance distance of 5.4mm, making it ideal for a wide range of applications, including solar string inverters, energy storage systems, and electric vehicle charging infrastructure.

The compact package, measuring approximately 16 x 23mm in length (excluding leads), features a 5.6mm deep creepage slot that effectively separates the drain lead from the other three leads. One of the standout products in this lineup is the IMYH200R024M1H, capable of handling a maximum current of 63A at 100°C (89A at 25°C).

Key specifications of the IMYH200R024M1H include a junction-to-case thermal resistance of 0.26K/W max (0.20K/W typ), gate threshold voltage ranging from 3.5 to 5.5V at 25°C, and an input capacitance of 4.85nF. The device's body diode is rated at 91A at 25°C, with a decrease to 69A at 100°C, ensuring reliable performance across varying operating conditions.

Infineon Technologies has also announced plans to introduce 2kV diodes in the near future, with a TO-247PLUS four-pin package slated for release in the third quarter of 2024, followed by 2kV SiC diodes in a TO-247-2 package in the fourth quarter. These forthcoming diodes are expected to find particular relevance in solar applications, further expanding the company's portfolio of high-performance power semiconductor solutions.