LPDDR4X SDRAMs: Low-Voltage, High-Speed Memory

With a low-voltage operation of 0.6V, the latest 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN LPDDR4X SDRAMs are designed to provide higher power efficiency, ultimately leading to increased battery life in a wide range of portable electronics. These devices cater to the needs of consumers, as well as the commercial and industrial markets, including smartphones, smart speakers, security surveillance systems, and various IoT devices that leverage AI and 5G technologies.

One of the key features of these LPDDR4X SDRAMs is their ability to enhance efficiency for advanced audio and ultra-high-resolution video in embedded applications. Operating at high clock frequencies of 2.133 GHz, they can achieve extremely high data rates of 4.2 Gbps. Additionally, with a 32-bit bus width, these devices can function smoothly over an industrial temperature range of -40°C to +95°C.

The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN are structured as two channels per device, with each channel comprising eight banks of 16 bits. These components offer fully synchronous operation, programmable read and write burst lengths of 16, 32, and on the fly, as well as configurable drive strength. Moreover, an on-chip temperature sensor is integrated to regulate the self-refresh rate.

Furthermore, these LPDDR4X SDRAMs serve as reliable drop-in, pin-for-pin-compatible replacements for various similar solutions used in high-bandwidth, high-performance memory system applications. This compatibility eliminates the need for costly redesigns and part requalification, making the transition to these new devices seamless and cost-effective.

For those interested in exploring the capabilities of the new LPDDR4X SDRAMs, samples and production quantities are readily available. With lead times of 12 weeks, interested parties can now access these cutting-edge memory solutions to enhance the performance and efficiency of their electronic devices.

For more information, visit www.alliancememory.com.