Mitsubishi confirms 7 GHz band 5G GaN PA module

Mitsubishi Electric Corporation has announced a significant technological advancement with the development of the first compact 7 GHz band gallium nitride (GaN) power amplifier module (PAM) boasting the highest power efficiency in its class. This innovative GaN PAM is poised to revolutionize the ease of installation and power efficiency of 5G-Advanced base stations, playing a crucial role in facilitating the transition to 6G technology. In a groundbreaking demonstration, Mitsubishi Electric successfully validated the performance of the new PAM using 5G-Advanced communication signals for the first time.

Utilizing its proprietary matching-circuit technology and high-performance GaN transistors, Mitsubishi Electric engineered the 7 GHz PAM to be compact and efficient. The prototype module, measuring a mere 12.0 x 8.0 mm, is a testament to the high-density mounting of components, which not only reduces the footprint but also enhances the overall installation efficiency of 5G-Advanced base stations. The company is committed to furthering its research and development endeavors to accelerate the practical application of GaN power amplifier modules in the realm of 5G-Advanced communication networks.

5G-Advanced technology promises unparalleled high-speed, ultra-wideband, and low-latency capabilities for broadband communications. Power amplifiers (PAs) utilized in 5G and 5G-Advanced networks must operate within their linear region to minimize RF distortion. However, the intricate higher-order modulation schemes, such as 256 Quadrature Amplitude Modulation (QAM) employed in these networks, are exceptionally sensitive to non-linear behavior, underscoring the critical importance of advanced amplifier technologies.

While GaN-on-SiC technology has demonstrated prowess at frequencies exceeding 40 GHz, GaN-on-Silicon faces distinct challenges as frequencies approach the 7 GHz band crucial for 5G-Advanced applications. Issues such as notable RF losses and diminished thermal conductivity on silicon substrates can compromise signal integrity and efficiency. Silicon substrates exhibit inferior thermal performance compared to SiC, posing challenges for effective thermal management at higher switching speeds where losses escalate with frequency. Additionally, parasitic effects become more pronounced at these elevated frequencies, complicating the achievement of optimal power transfer due to the fixed load impedance requirements of base stations.

The groundbreaking achievement in developing the 7 GHz GaN PAM will be showcased at the prestigious IEEE International Microwave Symposium in 2025, marking a significant milestone in the evolution of power amplifier technology for advanced communication networks.