Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices for faster switching for LiDAR sensors.
The Innoscience INN100W135A-Q has an RDS(on) of 13.5 mΩ while the smaller package INN100W800A-Q has an RDS(on) of 80 mΩ and are both certified to AEC-Q101. As well as LiDAR sensors the devices are also suitable for high power density DC-DC converters, and Class D audio applications in the automotive sector.
The two devices provide significant advantages in terms of size and power efficiency with the INN100W135A-Q and INN100W800A-Q have WLCSP packages measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon devices.
Parameters such as Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications.
“Both devices have been designed to meet the growing demand for efficiency and precision in driving assistance and autonomous driving technologies – GaN devices are rapidly replacing traditional silicon in critical automotive applications due to their superior performance. In LiDAR applications, it is well-understood that GaN enables higher resolution and greater detection distances while reducing power loss and temperature rise than is possible with traditional silicon technology,” said Denis Marcon, General Manager, Innoscience Europe.