New 1.25ns Gate Driver Boosts GaN HEMTs Performance

Rohm Introduces Nanosecond Gate Driver for GaN Power Transistors

Rohm, a leading semiconductor manufacturer, has unveiled a new nanosecond gate driver designed specifically for GaN power transistors. This innovative driver is targeted towards applications such as lidar, dc-dc converters, and Class-D audio.

The company claims that the driver is ideal for high-speed GaN switching, boasting a minimum gate input pulse width of 1.25ns. Rohm has also developed a method to suppress gate overshoots, a common issue with GaN devices, and has successfully implemented it into this driver.

The BD2311NVX is the specific part number for this gate driver, which is capable of delivering 5A of current from its compact 2 x 2 x 0.6mm 6pad SON package.

When loaded with 220pF, the driver's minimum input pulse width is 1.25ns, resulting in a rise-time of approximately 650ps and a fall time of around 700ps. The driver's source and sink outputs can handle currents of up to 7A and 5A respectively.

The turn-on propagation delay is typically 3.4ns with a 100pF load, while the turn-off delay is approximately 3ns. Additionally, the driver features separate source and sink outputs, allowing for the use of different series resistors to modify the turn-on and turn-off characteristics.

Operating within a voltage range of 4.5V to 5.5V and a temperature range of -40°C to +125°C, the BD2311NVX includes under-voltage lock-out for added protection.

Electronics Weekly has reached out to Rohm for more information regarding the overshoot reduction technique employed in this gate driver.