Next-Gen MOSFET Boosts Smartphone Performance

Magnachip Semiconductor has recently unveiled its latest innovation in power management technology with the launch of the MDWC12D024PERH 12V Dual N-channel MOSFET. This eighth generation MOSFET features a short channel design aimed at optimizing power consumption in smartphone battery protection circuits.

The key highlight of this new MOSFET is its utilization of Magnachip's proprietary trench-based Super-Short Channel FET II (SSCFET II) technology. By incorporating this advanced technology, the Rss(on) source resistance has been reduced by an impressive 22% compared to the previous generation. This reduction in resistance translates to lower power loss, faster smartphone charging times, and a significant decrease in internal temperature during fast charging mode.

In addition to the MDWC12D024PERH MOSFET, Magnachip has also introduced a 1200V, 75A IGBT packaged in a TO-247PLUS package specifically designed for solar energy applications. This new product further demonstrates Magnachip's commitment to developing cutting-edge power solutions for a variety of industries.

YJ Kim, the CEO of Magnachip, expressed his excitement about the company's latest technological advancements. "Following the success of our Super-Short Channel FET I technology, we are thrilled to introduce the upgraded Super-Short Channel FET II technology," said Kim. He also revealed the company's plans to continue innovating with high-density cell trench technology and to launch more advanced power solutions tailored for smartphones, smartwatches, and earphones in the coming months.

For those interested in the technical specifications of the MDWC12D024PERH MOSFET, the product offers a VSS of 12V, RSS(on) of 2.4mΩ (typical) and 1.95mΩ (maximum) at VGS=3.8V. Packaged in a WLCSP format, this MOSFET is poised to deliver efficient power management solutions for a range of electronic devices. More information about Magnachip's latest products and technologies can be found on their official website.