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Electronic Breaking News

TI Unveils Groundbreaking GaN Intelligent Power Module

TI Unveils Groundbreaking GaN Intelligent Power Module

Texas Instruments has introduced a groundbreaking intelligent power module (IPM) utilizing custom gallium nitride (GaN) devices, marking a significant milestone in the industry. The new DRV7308 GaN IPM is specifically designed for 250W motor drives commonly found in applications like air conditioning...

Published on: June 11, 2024

Cutting-Edge Isolated Probing System for Rapid Signal Switching

Cutting-Edge Isolated Probing System for Rapid Signal Switching

The RT-ZISO is revolutionizing isolated probe technology by setting new standards in accuracy, sensitivity, dynamic range, and bandwidth for next-generation wide bandgap (WBG) power designs utilizing SiC and GaN. This innovative technology delivers unprecedented performance that is crucial for advanced measurement tasks...

Published on: June 11, 2024

Revolutionizing Chip Design with Coreless Organic Interposer Technology

Revolutionizing Chip Design with Coreless Organic Interposer Technology

Toppan, a leading semiconductor technology company, has recently unveiled a groundbreaking innovation in the field of semiconductor packaging. The company has developed a high-reliability coreless organic interposer designed specifically for next-generation semiconductors, including chiplet designs.The coreless organic interposer utilizes a material with...

Published on: June 11, 2024

Vivid 6.4-inch TFT Display Offers High Resolution and Color Accuracy

Vivid 6.4-inch TFT Display Offers High Resolution and Color Accuracy

The latest advancement in display technology comes in the form of the 6.4-inch TFT display module, featuring the cutting-edge LTPS (low-temperature polycrystalline silicon) process. This innovative technology allows for high resolution, high brightness, and increased pixel density, all while maintaining low power...

Published on: June 11, 2024

High Efficiency Enabled by MCU Agnostic BLDC IC Family

High Efficiency Enabled by MCU Agnostic BLDC IC Family

The latest BLDC ICs from Power Integrations are revolutionizing the world of inverter technology. These innovative ICs come equipped with high- and low-side drivers and advanced FREDFETs featuring integrated lossless current sensing, resulting in an impressive inverter efficiency of up to 99...

Published on: June 11, 2024

About:Energy Partners with ST for Battery Management System

About:Energy Partners with ST for Battery Management System

Energy innovation is taking a giant leap forward with the latest development from About:Energy. The company has unveiled a groundbreaking demonstrator that seamlessly integrates battery data with automotive chips and the AutoDevKit platform from STMicroelectronics. This innovative BMS demonstrator is set to...

Published on: June 11, 2024

Vishay Introduces 1200V SiC MOSFET Line

Vishay Introduces 1200V SiC MOSFET Line

Vishay Intertechnology, a leading manufacturer of electronic components, has recently introduced its inaugural series of silicon carbide (SiC) MOSFETs to the market. The company's new line kicks off with a 1200V family of SiC MOSFETs, with plans already in motion for the...

Published on: June 11, 2024

MathWorks Introduces 6G Wireless Waveform Library

MathWorks Introduces 6G Wireless Waveform Library

Wireless communication technologies are constantly evolving, with researchers and engineers pushing the boundaries of what is possible. At an upcoming event, MathWorks will be showcasing several innovative workflows that demonstrate the latest advancements in the field. One of the highlights will be...

Published on: June 11, 2024

New 4mΩ SiC JFET Ideal for Circuit Breakers

New 4mΩ SiC JFET Ideal for Circuit Breakers

Qorvo has recently introduced the industry's first 4 milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a standard TOLL leadless package. The Qorvo 750V 4mΩ SiC JFET is specifically designed for circuit protection applications, such as solid-state circuit breakers, where...

Published on: June 11, 2024

Fraunhofer IAF Unveils Latest 1200V GaN Update

Fraunhofer IAF Unveils Latest 1200V GaN Update

Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) in Germany are making significant strides in the development of gallium nitride (GaN) transistors with impressive blocking voltages exceeding 1200V. This groundbreaking work is paving the way for more efficient and...

Published on: June 10, 2024

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