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Samsung Denies Failure of HBM Chips in Nvidia Tests

May 27, 2024

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Recent reports have shed light on the challenges faced by Samsung's HBM chips in meeting Nvidia's stringent tests, primarily due to power consumption and heat issues. The High Bandwidth Memory (HBM) DRAM multi-die components play a crucial role in GPU technology, especially in addressing AI processing in server farms within data centers. With the market experiencing rapid growth, Nvidia currently dominates with an estimated 80 percent market share.

Samsung, however, has reframed the narrative, emphasizing that the issues are not indicative of failure but rather an ongoing process of optimization in collaboration with their customers. According to a statement reported by Business Korea, Samsung is actively engaged in testing HBM supply with various global partners and continuously refining technology and performance through close cooperation with multiple companies.

Meanwhile, SK Hynix, a key player in the HBM market, is gearing up for a battle over the latest iteration of the standard, HBM3E. Reports indicate that SK Hynix has already 'sold out' of HBM DRAMs for the year 2024, signaling strong demand for their products. On the other hand, Micron has commenced production of what is being touted as a 'better' version of HBM3E memory, aiming to make a mark in the competitive landscape.

Not to be outdone, Samsung has made significant strides by introducing a 12-high configuration with their HBM3E 36Gbyte DRAM, showcasing their commitment to pushing the boundaries of HBM technology. Industry projections suggest that HBM is poised to capture a substantial 20 percent share of the DRAM market by 2024, underscoring its growing importance in the semiconductor industry.

In conclusion, the dynamic landscape of HBM chips in the GPU market reflects the intense competition and innovation driving advancements in AI processing and data center technologies. As companies like Samsung, SK Hynix, and Micron continue to push the boundaries of HBM technology, consumers can expect further enhancements in performance and efficiency, ultimately shaping the future of high-speed memory solutions in the semiconductor industry.

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