Graphenea Semiconductor Launches Innovative MPW Experiment

Universities, R&D centres, and startups often face the challenge of developing prototypes with limited budgets. To address this issue, a unique service has emerged that allows these entities to access cutting-edge devices at an affordable entry point. This service leverages a mask sharing scheme, enabling the manufacturing of devices with different geometries but shared device architecture on the same mask. By doing so, organizations can obtain the necessary devices without having to invest in more than what is required.

Graphenea, a prominent player in the field of semiconductor technology, has recently partnered with the 2D Experimental Pilot Line (2D-EPL) to introduce a groundbreaking MPW run featuring a novel process flow. Operating within the esteemed 2D-EPL under the auspices of the Graphene Flagship, Graphenea Semiconductor is set to redefine possibilities in device architecture and application versatility.

Central to this innovation is a meticulously crafted device fabrication process flow developed by Graphenea. This framework enables the implementation of three distinct device architectures, catering to a wide range of applications from general electronics to advanced sensing and optoelectronics. The use of HfOx as the dielectric material enhances capacitive coupling and operational efficiency at lower voltages, while the introduction of AlOx as the passivation layer adds resilience, making the devices suitable for harsh environments.

One of the key device architectures that can be implemented is DEVICE A, which allows for devices with backgates utilizing HfOx as the gate dielectric. Additionally, 2-Terminal Devices offer versatility in chemiresistors and backgating capabilities, making them ideal for applications such as magnetic sensing and gas detection. Furthermore, 3-Terminal Devices with Backgates provide a platform for sensitization with various materials, enabling the creation of hybrid biosensors for advanced sensing applications.

Another architecture, 4-Terminal Devices, offers a diverse range of functionalities, from Hall bar devices to integrated gas sensors with local heaters. This architecture provides precise control over desorption phenomena on the channels, enhancing the sensing capabilities of the devices. Despite being experimental within the 2D EPL, Graphenea brings a wealth of experience in fabricating Graphene Field-Effect Transistors (GFETs), with over half a million units successfully manufactured. The seasoned team at Graphenea is ready to collaborate and provide support through direct communication channels, leveraging their expertise to drive innovation in semiconductor technology.