OpenLight Photonics, a leading photonic chip designer, has recently unveiled a groundbreaking 400G/lane modulator on the integrated silicon photonics platform at Tower Semiconductor. The impressive achievement was made possible through the utilization of the PH18DA process, enabling the design to surpass a 3.5dB extinction ratio with the industry-standard PAM-4 modulation format at a drive voltage of 0.6 volts peak-to-peak. This significant milestone showcases the continuous innovation in the field of optical communication technology.
The transition to 400G/lane optical communication architectures is being primarily motivated by the escalating demand for high-speed data transfer in various cutting-edge technologies such as cloud computing, artificial intelligence, and machine learning applications. The newly developed modulator serves as a seamless replacement for the existing 200G/lane modulators, offering enhanced performance and efficiency. This development coincides with the recent introduction of silicon photonics process technology by STMicroelectronics, further highlighting the rapid advancements in the industry.
Operating at an impressive speed of 400G per lane across all four CWDM wavelengths, this innovative design paves the way for commercially viable solutions in the realm of next-generation 3.2Tb data transfer and beyond. The integration of diverse materials, including III-V materials on a silicon photonics substrate, has enabled the creation of a heterogeneous device with superior characteristics such as reduced size, increased bandwidth, and lower drive voltage. This transformative approach underscores the potential for significant improvements in optical communication technology.
The collaboration between OpenLight Photonics and Tower Semiconductor marks a pivotal moment in the integration of advanced silicon photonics into the data communication landscape. Dr. Adam Carter, the CEO of OpenLight, expressed optimism about the future prospects of high-speed networking, emphasizing the critical role played by this demonstration in driving groundbreaking advancements. The successful development of the 400G modulator signifies a strategic move towards enhancing the reliability and performance of optical communication solutions.
Russell Ellwanger, the CEO of Tower Semiconductor, echoed the sentiment of collaboration and innovation, highlighting the cost-effective approach adopted to support 400G/lane. The seamless transition from 200G to 400G per lane demonstrates a commitment to providing scalable, reliable, and high-performance solutions for the evolving demands of the industry. This collaborative effort not only accelerates the adoption of higher speeds but also eliminates the need for complex integration alternatives, offering a secure path towards future advancements in optical communication technology.