Advanced GaN Switches and Half-Bridges with Built-In Drivers

Infineon Technologies has recently announced the expansion of its CoolGaN Drive family, introducing new switches and half-bridges with integrated drivers. The latest additions to the lineup aim to enhance efficiency, reduce system size, and enable cost savings across various applications.

The Infineon CoolGaN Drive 700 V G5 single switches are designed to integrate one transistor with a gate driver in PQFN 5×6 and PQFN 6×8 packages. On the other hand, the CoolGaN Drive HB 600 V G5 devices combine two transistors with integrated high- and low-side gate drivers in a compact LGA 6×8 package.

According to Johannes Schoiswohl, Senior Vice President & General Manager of the GaN Systems Business Line at Infineon, the company has been dedicated to advancing innovation in GaN technology to address real-world power challenges. The new CoolGaN Drive product family exemplifies Infineon's commitment to assisting customers in developing compact designs with high power density and efficiency through GaN technology.

These integrated devices are based on the latest 650V G5 CoolGaN transistors and offer features such as a bootstrap diode, loss-free current measurement, and adjustable switch-on and switch-off dV/dt. Additionally, they come equipped with OCP/OTP/SCP protection functions, enabling higher switching frequencies for smaller and more efficient system solutions with increased power density.

Infineon's CoolGaN Drive devices are ideal for a range of applications, including longer-range e-bikes, portable power tools, and lightweight household appliances like vacuums, fans, and hairdryers. The availability of samples for the half-bridge solutions has already begun, with single-switch samples expected to be available starting in Q4 2024.