Advancements in GaN Technology: 300mm Wafer Breakthrough

Shin-Etsu Chemical, a leading company in Japan, has recently unveiled a groundbreaking 300mm (12in) substrate designed specifically for GaN epitaxial growth. This innovative product has already entered the market in the form of samples, marking a significant advancement in the field of semiconductor materials.

The QST 300mm wafer developed by Shin-Etsu boasts the same coefficient of thermal expansion (CTE) as GaN, effectively preventing warping and cracks on the GaN epitaxial layer. This breakthrough not only enhances the quality of the GaN layer but also improves overall yield, making it a game-changer for manufacturers in the industry.

Derived from the Qromis Substrate Technology (QST) licensed from Qromis, the substrate features a polycrystalline aluminum nitride ceramic core with a CTE that aligns perfectly with GaN. Additionally, multiple layers of inorganic film envelop the core, providing added protection and stability. The presence of a silicon dioxide (SiO2) bonding layer facilitates the formation of a single-crystalline silicon layer, serving as a nucleation site for the epitaxial growth of GaN.

One of the key advantages of the 300mm QST substrate is its ability to enable GaN epitaxial growth without the common issues of warping or cracking, which were prevalent when using traditional silicon wafer substrates. This advancement not only ensures a more cost-effective manufacturing process but also opens up new possibilities for device development in various sectors.

As a result, customers are actively evaluating the potential of QST substrates and GaN on QST epitaxial substrates for a wide range of applications, including power devices, high-frequency devices, and LEDs. The company has already initiated development projects for power supplies targeting data centers, highlighting the growing interest and demand for this cutting-edge technology.