Cutting-Edge Power Innovations Unveiled at 70th IEDM

Europe has long been a leader in power devices, and this expertise was on full display at the 70th anniversary IEDM conference held in December. One of the standout sessions focused on Emerging Power Electronic Devices and Integration for a Sustainable Society, shedding light on the latest developments and future trends in materials such as gallium nitride (GaN) and silicon carbide (SiC), with a shift towards gallium oxide (GaO) for high-temperature applications.

A notable highlight was the introduction of a new CMOS-friendly, large-diameter substrate platform by Qromis, underscoring the crucial role of substrate innovation in driving advancements in device technologies. Insights from Soitec in France further emphasized the significance of advanced engineered substrates in enhancing performance in RF and power electronics applications, by minimizing signal loss, improving signal linearity, and enabling sophisticated integration schemes through backside substrate processing.

Intel researchers made a significant breakthrough by developing the industry's first high-performance scaled E-mode GaN MOSHEMT transistors on a 300mm GaN-on-TRSOI substrate. These MOSHEMT devices combine the strengths of silicon MOSFETs and III-V semiconductors, showcasing the potential for enhanced efficiency and performance in power electronics.

At the conference, Intel and TSMC are set to unveil details about their cutting-edge 2nm processes, highlighting the continuous drive towards miniaturization and enhanced capabilities in semiconductor technology. The versatility of GaN MOSHEMT devices was demonstrated through various configurations, showcasing impressive RF performance metrics and the potential for applications in next-generation wireless communications.

Further advancements in power devices were explored, including enhancements in SiC devices for high-power applications at Toshiba and the promising prospects of GaN in high-voltage and bidirectional settings, as investigated by the University of California at Santa Barbara. The unveiling of the first Ultra-Wide Bandgap power device capable of operating at 250°C opens up new possibilities for medium voltage power electronics in grid and renewable energy applications.