Intel Targets Scalable Silicon Quantum Processors

An Intel research paper titled “Probing single electrons across 300-mm spin qubit wafers” has made significant strides in the field of quantum computing. Published in the prestigious journal Nature, the study showcases the cutting-edge uniformity, fidelity, and measurement statistics achieved with spin qubits. This breakthrough paves the way for the mass production and further scaling of silicon-based quantum processors, crucial steps towards the development of fault-tolerant quantum computers.

Quantum hardware experts at Intel have devised a groundbreaking 300-millimeter cryogenic probing process to gather extensive data on the performance of spin qubit devices across entire wafers. By utilizing complementary metal oxide semiconductor (CMOS) manufacturing techniques, the team has been able to enhance qubit device yield and implement a high-throughput testing process, resulting in a wealth of data for analyzing uniformity, a key factor in quantum computer scalability.

The research has revealed that single-electron devices derived from these wafers exhibit exceptional performance when functioning as spin qubits, achieving an impressive 99.9% gate fidelity. This level of fidelity stands as the highest reported for qubits produced using all-CMOS-industry manufacturing processes. The compact size of spin qubits, approximately 100 nanometers in diameter, gives them a higher density compared to other qubit variants, such as superconducting qubits, enabling the creation of more intricate quantum computers on a single chip of equivalent size.

Intel's fabrication approach, employing extreme ultraviolet (EUV) lithography, has enabled the company to achieve these precise dimensions while maintaining high-volume production capabilities. As the quest for fault-tolerant quantum computers with millions of uniform qubits intensifies, the importance of reliable fabrication processes cannot be overstated. Leveraging its extensive experience in transistor manufacturing, Intel is leading the charge in developing silicon spin qubits that closely resemble transistors, leveraging their state-of-the-art 300-millimeter CMOS manufacturing techniques that routinely yield billions of transistors per chip.

Looking ahead, Intel is committed to further advancements by expanding the use of these techniques to incorporate additional interconnect layers for fabricating 2D arrays with increased qubit counts and connectivity. The company also aims to demonstrate high-fidelity two-qubit gates using its industry-standard manufacturing process. While these goals are on the horizon, the primary focus remains on scaling quantum devices and enhancing performance with the next generation of quantum chips. For more details on the study, the complete findings can be accessed in the latest issue of Nature.