Lit Thinking Collaborates with Cornell on AlN Pin Diodes

Researchers at Cornell University, in collaboration with Florida-based technology company Lit Thinking, are embarking on a groundbreaking project that aims to utilize aluminium nitride as a transistor material for high-power devices. This innovative endeavor is made possible through a grant from the Defense Advanced Research Projects Agency (DARPA) and involves a team of experts from the Department of Materials Science and Engineering at Cornell.

The primary focus of the project is to explore the use of aluminium nitride (AlN) as an ultrawide-bandgap semiconductor material. This material has the potential to significantly enhance the efficiency and performance of semiconductors, particularly in handling high voltages and currents. One key aspect that the Cornell-led team will be working on is achieving ultralow resistance in pin diodes, which is crucial for reducing power loss and heat generation in high-power applications.

Principal investigator Debdeep Jena, the David E. Burr Professor in electrical and computer engineering and in materials science and engineering at Cornell, highlighted the significance of making aluminium nitride conductive. He stated, “Because aluminium nitride is normally an excellent electrical insulator, making it conductive holds the key to exploiting its amazing properties. In this DARPA program, our interdisciplinary team is investigating several new ideas to unlock the potential of this ultrawide bandgap semiconductor.”

Building on previous research conducted by Jena and his colleagues, the project aims to further advance the field by developing aluminium nitride-based pin diodes with extremely low on-state electrical resistance. This advancement is expected to pave the way for improved efficiency and performance in high-power applications. Additionally, researchers in Germany have also been exploring the development of AlN transistors, indicating the global interest and potential impact of this research.

Asahi Kasei, a key player in the semiconductor industry, recently announced the production of the first 4-inch aluminum nitride substrate. This milestone further underscores the growing importance of aluminium nitride in the field of semiconductor technology. Schowalter, a researcher involved in the project, expressed optimism about the potential outcomes, stating, “Aluminium nitride semiconductor substrates have also recently enabled the realization of the very first deep ultraviolet diode lasers. This project has the potential to enable similar revolutionary electronic devices in the near future, including cost-effective far-UVC optoelectronic sources for safe disinfection of public spaces.”