New E6 Teams Utilize 4in Single Crystal Diamond Wafers

Element Six (E6) is at the forefront of a groundbreaking project in the United States aimed at developing ultra-wide band high-power semiconductors utilizing single crystal (SC) diamond substrates.

As a subsidiary of the renowned diamond firm De Beers and based in London, UK, E6 specializes in chemical vapor deposition (CVD) polycrystalline diamond and high-quality single crystal diamond synthesis. The company is set to create a 4-inch (100mm) device-grade diamond substrate, marking a significant advancement in semiconductor technology.

Already, E6's polycrystalline diamond wafers, exceeding 4 inches in size, have been instrumental in enhancing telecommunication infrastructures and defense applications. These wafers are utilized as optical windows in extreme ultraviolet (EUV) lithography and in thermal management applications for high-power density silicon and gallium nitride (GaN) semiconductor devices.

The Ultra-Wide BandGap Semiconductors (UWBGS) program, spearheaded by the US Defense Advanced Research Projects Agency (DARPA), is focused on the development of cutting-edge substrates, device layers, and junctions to drive innovation in the semiconductor industry.

For this initiative, Element Six has formed strategic partnerships with Hiqute Diamond in France for dislocation engineering expertise, Orbray in Japan, and Raytheon for RF gallium nitride proficiency. Additionally, collaborations with Stanford and Princeton Universities in the US bring in-depth knowledge in bulk material and surface processing characterization to the project.

Orbray and Element Six have embarked on cross-licensing agreements for intellectual property and equipment essential for producing wafer-scale high-quality SC diamond, positioning themselves at the forefront of diamond technology advancements in anticipation of upcoming industrial opportunities.

The SC diamond substrate developed by Element Six has already made significant contributions to the monitoring systems of the CERN Large Hadron Collider, playing a pivotal role in the discovery of the Higgs Boson Particle. Furthermore, in partnership with high-power semiconductor leader ABB, E6 achieved a milestone by introducing the first high-voltage bulk diamond-based Schottky diodes. The company recently completed the construction and launch of an advanced CVD facility in Portland, Oregon, powered by renewable energy sources.

Key to unlocking advanced electronics, the SC diamond substrate is crucial for the development of high-power RF switches, radar and communications amplifiers, high-voltage power switches, high-temperature electronics for extreme environments, and deep ultraviolet (UV) LEDs and lasers. These applications underscore the vast potential of the multi-billion dollar system market.

“We are honored to collaborate with our partners in the DARPA UWBGS program. Industrial diamond has revolutionized numerous sectors since its initial synthesis on a large scale in the 1950s, and I am confident that the technological advancements in UWBGS will pave the way for another 70 years of opportunities in the semiconductor industry,” stated Prof. Daniel Twitchen, Chief Technologist at Element Six.

For more information, visit www.e6.com