77 Views

New S7 Package Option for High-Performance SemiQ 1200V SiC Module

LinkedIn Facebook X
August 15, 2024

Get a Price Quote

SemiQ in the US has recently expanded its QSiC family of 1200V, half-bridge MOSFET and Schottky diode SiC power modules by introducing the new S7 package. This addition aims to provide power engineers with enhanced design flexibility, offering compact, high-efficiency solutions for new designs while also supporting drop-in-replacement in existing legacy systems that require improved efficiency.

The QSiC family now includes a 529A MOSFET module (GCMX003A120S7B1), a 348A MOSFET module (GCMX005A120S7B1), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5) in the S7 package. These modules feature industry-standard 62.0mm footprints and a height of just 17.0mm, catering to the size, weight, and power requirements of various demanding applications.

The S7 package is designed to meet the needs of applications such as induction heaters, welding equipment, uninterruptible power supplies (UPS), photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters, and battery charging systems for electric vehicles (EVs). In addition to their compact form factor, the modules' high-efficiency, low-loss operation helps reduce system heat dissipation and enables the use of smaller heatsinks.

Dr. Timothy Han, President at SemiQ, emphasizes the company's commitment to providing a comprehensive portfolio of SiC technologies that empower designers to optimize efficiency, performance, and size in today's demanding applications. The introduction of the new package option for the 1200V QSiC MOSFET and SiC diode module families expands the choices available to designers seeking to develop new applications or upgrade legacy systems without extensive redesign.

To ensure the reliability and quality of each module, SemiQ conducts rigorous testing processes, including gate burn-in testing at the wafer level for the SiC devices. Various stress tests, such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) tests, are employed to meet automotive and industrial grade quality standards. All parts have undergone testing exceeding 1400V.

Recent Stories