Renesas Bolsters GaN Efforts with Transphorm Deal Completion

Renesas Electronics has recently completed the acquisition of Transphorm, a significant move that has propelled the company into the forefront of GaN (Gallium Nitride) technology. This strategic acquisition has enabled Renesas to launch 15 GaN-based reference designs, marking a major milestone in the company's expansion into the power semiconductor market.

The acquisition of Transphorm has intensified the competition in the GaN devices sector, particularly with Infineon, which acquired GaN Systems last year. Renesas' 15 newly launched reference designs span across various domains including embedded processing, power, connectivity, and analog portfolios. These designs incorporate Transphorm's automotive-grade GaN technology, offering solutions for on-board battery chargers and 3-in-1 powertrain solutions for electric vehicles.

"Customers can now leverage the benefits of our new GaN products through turnkey reference designs that combine the expertise of both Renesas and Transphorm," stated Chris Allexandre, Senior Vice President and General Manager of Power at Renesas. The integration of GaN technology into Renesas' portfolio underscores the company's dedication to developing innovative products that enhance people's lives by providing efficient and sustainable power solutions that reduce energy consumption and environmental impact.

In addition to the acquisition of Transphorm, Renesas has implemented several strategic initiatives to strengthen its position in the power semiconductor market. These initiatives include the establishment of the Kofu Factory, a specialized 300-mm wafer fab for power products, the expansion of a new SiC production line at the Takasaki Factory, and a long-term agreement with Wolfspeed to ensure a stable supply of SiC wafers for the next decade.

Transphorm, founded in 2007 in Goleta, California, traces its origins back to the University of California at Santa Barbara. The reference designs introduced by Renesas incorporate wide bandgap (WBG) materials such as GaN and silicon carbide (SiC), which are recognized as crucial technologies for the next generation of power semiconductors. GaN and SiC-based products are anticipated to experience rapid growth in the coming years, driven by the increasing demand from various sectors including electric vehicles, data centers, renewable energy, industrial power conversion, and consumer electronics.