Samsung and TSMC Collaborate on Next-Gen HBM4 DRAM

Kochpatcharin recently spoke at the Semicon Taiwan 2024 Forum, where it was revealed that Samsung and TSMC have joined forces on memory technology for the first time. This collaboration marks a significant milestone in the industry, bringing together two major players to innovate in the field of memory solutions.

According to reports, the partnership aims to develop a bufferless HBM4 that promises 40 percent higher power efficiency and 10 percent lower latency compared to existing models. HBM technology has gained widespread adoption in AI computing applications, making advancements in this area crucial for the future of the industry.

While Samsung and TSMC are competitors in the foundry logic sector, with TSMC not traditionally involved in DRAM production, the trend towards multi-die packaging and chiplet advanced packaging for AI processors has led to increased collaboration between the two companies. This strategic alliance reflects the evolving landscape of semiconductor technology and the importance of cooperation in driving innovation.

SK Hynix, Samsung, and Micron are all gearing up to introduce HBM3E DRAMs, with plans to launch the HBM4 format in 2025. SK Hynix, in particular, has announced ambitious goals to develop products with 30 times the performance of current HBM DRAM offerings, catering to the growing demand for high-bandwidth memory solutions in the market.

Samsung's partnership with TSMC is expected to result in the delivery of customized chips and services tailored to the needs of clients such as Nvidia and Google. While Samsung possesses the capabilities to provide end-to-end HBM4 solutions, including memory production, foundry services, and advanced packaging, leveraging TSMC's technology is seen as a strategic move to expand its client base and enhance its competitive position in the market.