3D Flash Memory Achieves 4.8 Gb/s NAND Interface Speed

At the ISSCC 2025 event, KIOXIA and Sandisk made waves with the unveiling of their cutting-edge 3D flash memory technology. This new technology boasts a lightning-fast 4.8Gb/s NAND interface speed, exceptional power efficiency, and increased density. The key innovation behind this 3D flash memory is the revolutionary CBA (CMOS directly Bonded to Array) technology. By manufacturing the CMOS wafer and cell array wafer separately in their optimized conditions and then bonding them together, the memory achieves superior performance.

The memory also adopts the latest interface standard, Toggle DDR6.0, for NAND flash memory. Utilizing the SCA (Separate Command Address) protocol, a novel command address input method, the interface separates the bus for Command/Address input from the bus for data transfer. This parallel usage reduces data input/output time significantly. Additionally, the 3D memory incorporates PI-LTT (Power Isolated Low-Tapped Termination) technology, which effectively reduces power consumption.

Compared to their 8th generation 3D flash memory currently in mass production, KIOXIA and Sandisk anticipate a remarkable 33 percent improvement in NAND interface speed with the new technology, achieving the impressive 4.8Gb/s interface speed. Moreover, the technology promises enhanced power efficiency for data input/output, with a 10 percent reduction in power consumption for input and a substantial 34 percent reduction for output. Looking ahead to the 10th generation 3D flash memory, the partners showcased a significant enhancement in bit density by 59 percent through increasing the number of memory layers to 332 and optimizing the floor plan for higher planar density.

Axel Stoermann, Vice President and Chief Technology Officer at KIOXIA Europe GmbH, highlighted the increasing demand for improved power efficiency in data centers and the exponential growth in data generation driven by AI technology-driven applications. Stoermann emphasized KIOXIA's commitment to meeting future storage requirements by focusing on higher speeds, larger capacity, and lower power consumption. Similarly, Alper Ilkbahar, SVP of Global Strategy and Technology at Sandisk, emphasized the evolving needs of customers in the era of advancing AI technology. Through their CBA technology innovation, Sandisk aims to develop products that offer the optimal balance of capacity, speed, performance, and capital efficiency to cater to diverse customer segments.

Looking forward, KIOXIA and Sandisk revealed their plans for the upcoming 9th generation 3D flash memory. By combining CBA technology with existing memory cell technology, the companies aim to deliver capital-efficient, high-performance, and low-power products that meet the evolving needs of the market. With a strong focus on innovation and addressing the growing demands of the digital landscape, KIOXIA and Sandisk are poised to continue pushing the boundaries of flash memory technology.