Infineon introduces 2kV SiC Schottky diode in TO-247 package

Infineon Technologies has introduced a new 2000V SiC Schottky diode in the widely used TO-247-2 package, designed to serve as a seamless replacement in solar and electric vehicle power systems. This latest diode leverages the same fifth-generation silicon carbide (SiC) process as its predecessor, which was launched in October of the previous year. It supports current ratings ranging from 10 to 80 A, making it suitable for applications with DC link voltages up to 1500V. By utilizing this diode, the component count can be reduced by half compared to designs with up to 1200V and a two-level topology.

The Schottky diode incorporates Infineon’s .XT interconnection technology, which plays a crucial role in minimizing thermal resistance and impedance, thereby improving heat management within the system. The diodes have undergone rigorous HV-H3TRB reliability testing to validate their humidity robustness. Notably, these diodes exhibit neither reverse recovery nor forward recovery, and they feature a low forward voltage, all of which contribute to enhanced system performance.

Moreover, the 2000V diode family is compatible with the CoolSiC 2000V MOSFETs in the TO-247Plus-4 HCC package, offering a comprehensive solution for power system designers. The CoolSiC Schottky Diode 2000V G5 family in TO-247-2 is now commercially available, providing engineers with a high-performance component for their projects. To further support customers, Infineon also offers an evaluation board for the 2000V CoolSiC product family, along with a complementary gate driver portfolio.

By combining cutting-edge technology with practical design considerations, Infineon Technologies continues to drive innovation in the field of power electronics. The introduction of the 2000V SiC Schottky diode represents a significant advancement in power component offerings, catering to the evolving needs of industries such as solar energy and electric vehicles. With a focus on efficiency and reliability, these diodes are poised to enhance the performance of power systems while simplifying the overall design process.

Engineers and system integrators can now leverage the benefits of the latest diode technology from Infineon to optimize their power designs. The seamless integration of the 2000V SiC Schottky diode into existing systems allows for improved efficiency and reduced component count, ultimately leading to cost savings and enhanced system reliability. As the demand for high-performance power solutions continues to grow, innovations like these diodes play a crucial role in shaping the future of sustainable energy systems.