New 80/100V MOSFET Targets 1.2mΩ On-Resistance

Nexperia, a leading semiconductor manufacturer, has recently introduced a cutting-edge 100V MOSFET designed to deliver exceptional performance in switching applications. This new MOSFET is optimized for low RDSon, minimal spiking, and high efficiency, making it ideal for a wide range of applications where power management is crucial.

Expanding its NextPower MOSFET portfolio, Nexperia has unveiled 80V and 100V MOSFET devices housed in LFPAK packaging. These devices feature industry-standard 5x6 mm and 8x8 mm footprints, catering to the needs of servers, power supplies, fast chargers, and USB-PD chargers.

The 80/100V power devices boast impressively low RDS(on) values ranging from 1.8 mΩ to 15 mΩ, representing a 31% reduction compared to previous offerings. Nexperia has ambitious plans to achieve an even lower RDS(on) of 1.2 mΩ, setting a new benchmark in power efficiency.

One of the key highlights of these devices is their low Qrr, a crucial factor that significantly impacts spiking and electromagnetic interference (EMI). While many MOSFET manufacturers prioritize efficiency through metrics like QG(tot) and QGD, Nexperia's focus on Qrr has enabled them to minimize spiking and EMI levels, enhancing overall performance.

Nexperia's strategic approach to reducing spiking in its NextPower 80/100V devices not only improves efficiency but also minimizes the risk of failing electromagnetic compatibility (EMC) testing. This proactive measure can save end users from costly late-stage redesigns that may require additional external components.

In the coming months, Nexperia plans to enhance its NextPower 80/100V portfolio by introducing an LFPAK88 MOSFET with an impressive RDS(on) as low as 1.2 mΩ at 80V. Additionally, the company will introduce the power-dense CCPAK1212 to further expand its product offerings.

For more information on Nexperia's latest NextPower 80/100V MOSFETs and other innovative semiconductor solutions, visit Nexperia's official website.