NXP Collaborates with Raaam on SRAM Replacement Solution

Raaam, a pioneering tech company, has introduced a groundbreaking memory technology known as Gain-Cell Random Access Memory (GCRAM). According to Raaam, GCRAM offers a remarkable 50 percent reduction in area compared to SRAM, while consuming only 10 percent of the power required by traditional SRAM. The company recently announced a major partnership with a leading fabless chip company and TSMC, a prominent foundry, although the specific details of the collaboration have not been disclosed.

This innovative memory solution is a type of DRAM that can be seamlessly integrated into standard CMOS manufacturing processes. Functioning similarly to SRAM, GCRAM occupies significantly less space while delivering substantial power savings by eliminating the need for off-chip accesses to external caches.

Victor Wang, the Vice President of Front-End Innovation at NXP, highlighted the importance of addressing the challenges posed by SRAM scaling limitations in advanced process nodes. Wang emphasized the potential advantages of Raaam's technology in reducing die area, which could enhance the density of future NXP memory solutions.

In a recent development, Raaam has secured a key licensee for its innovative SRAM replacement technology. Robert Giterman, the Co-Founder and CEO of Raaam, expressed confidence in the collaboration with NXP, considering it a significant milestone for the company. Giterman believes that NXP's future products leveraging Raaam's technology will gain a competitive edge in the market.

For more information about Raaam's cutting-edge memory technology and its partnership with NXP, visit their official websites at www.raaam-tech.com and www.nxp.com. Additionally, other startups in the industry are also making strides in the development of cost-effective, low-power on-chip memory solutions, such as SureCore, which specializes in optimizing AI memory IP for enhanced energy efficiency.