ON Semiconductor Enhances 1200V Planar SiC MOSFET Technology

Onsemi has introduced a cutting-edge 1200V planar silicon carbide MOSFET, marking the beginning of a new era in power semiconductor technology. The EliteSiC M3e planar SiC MOSFET boasts impressive performance improvements, including a 30% reduction in conduction losses and up to 50% lower turn-off losses compared to its predecessor. With an on-resistance of 11mΩ, this innovative device enables approximately 20% more output power within the same traction inverter housing or a 20% reduction in SiC content for fixed power levels, leading to cost savings and facilitating the development of smaller, lighter, and more reliable automotive and power supply solutions.

Dr. Mrinal Das, senior director of technical marketing at onsemi's Power Solutions Group, expressed the company's commitment to driving technological advancements to meet the escalating global energy demands. "We are leveraging our extensive experience in power semiconductors to push the boundaries of speed and innovation in engineering and manufacturing," stated Dr. Das. He also revealed onsemi's ambitious roadmap, with plans already underway for the development of the M4 generation and initial explorations into the M5 and M6 iterations.

While acknowledging the inevitability of transitioning to trench SiC devices in the future, Dr. Das emphasized the superiority of planar technology in the current landscape. He highlighted the proven track record of planar SiC MOSFETs, backed by four decades of research and 15 years of industry implementation, as a testament to its reliability and maturity. Dr. Das underscored the importance of maximizing trench utilization before making the switch, ensuring optimal performance and return on investment.

Onsemi's vertical integration across the entire value chain, from powder to power modules, empowers the company to maintain control over critical aspects such as materials, devices, and packaging. This holistic approach enables onsemi to accelerate the introduction of new generations of silicon carbide technology to the market, driving innovation and efficiency across all levels of design and manufacturing. By leveraging in-house system expertise, onsemi aims to not only validate technologies internally but also serve as a trusted partner to its customers, offering reliable solutions tailored to their specific needs.

Looking ahead, onsemi has secured a long-term supply contract with BMW, underscoring the automotive industry's growing reliance on advanced power semiconductors for electrified mobility solutions. The EliteSiC M3e SiC MOSFET, designed for robust performance and longevity, is poised to play a pivotal role in the electrification journey. With a focus on enhancing power density and efficiency, onsemi's silicon carbide technology roadmap sets the stage for meeting the escalating energy demands and facilitating the global transition to electrification by 2030.