Silvaco Enhances Digital Twin Tool for Cryo CMOS, FinFET, and GAA Technologies

Silvaco, a leading provider of simulation software for semiconductor devices, has recently announced the expansion of its TCAD digital twin tool to support the latest CMOS FinFET and GAA transistor technologies, as well as planar devices down to 1 Kelvin.

The 2024 TCAD Baseline Release simulation platform with digital twin modeling is a significant advancement that provides support for planar cryo CMOS, FinFET, and Gate-All-Around (GAA) transistor technologies. This development enables semiconductor companies to accelerate their technology development processes, ultimately leading to faster time-to-market for new products.

With the platform's capability for advanced CMOS process and device simulation, the development of next-generation semiconductor devices is greatly enhanced. This boost in performance, yield, and efficiency is crucial in meeting the demands of the ever-evolving semiconductor design and manufacturing landscape.

One of the key features of the tool is its ability to perform highly accurate 3D process simulation with digital twin-like precision. It also integrates stress simulation to model deformed structures, providing a comprehensive view of the device behavior under various conditions. Moreover, the platform supports cryogenic applications through an atomistic quantum transport approach, allowing for the modeling of transistor structures down to extremely low temperatures of 1 Kelvin.

Dr. Babak Taheri, the Chief Executive Officer of Silvaco, expressed his excitement about the platform's expansion into the advanced CMOS market. He highlighted the platform's success in various sectors such as Display, Photonics, Memory, and Power Semiconductor markets, where it has driven innovation and improved performance. The availability of the TCAD platform for broad market adoption signifies a significant milestone in enabling customers to accelerate their technology development while achieving cost savings.

According to Tillmann Kubis, an Associate Professor at Purdue University, the collaboration between Purdue's team of scientists and Silvaco has been instrumental in advancing nanotechnology simulations, particularly in modeling advanced quantum physical effects exhibited by technologies like GAA. The integration of NEMO5, an NEGF-based atomistic quantum transport simulation tool developed at Purdue, has significantly enhanced the accuracy and performance of Silvaco's TCAD simulations.

Eric Guichard, Senior VP and General Manager of the TCAD Business Unit at Silvaco, emphasized the extensive development efforts that have gone into the latest release of the TCAD platform. By incorporating digital twin modeling for CMOS technologies and atomistic simulation technologies, the platform now offers a competitive and attractive solution for semiconductor companies designing in advanced Planar CMOS, FinFET, and emerging GAA process technologies.

For more information about Silvaco's TCAD platform and its latest advancements, visit www.silvaco.com.