Texas Instruments (TI) has introduced a new family of radiation-hardened and radiation-tolerant half-bridge gate drivers specifically designed for 200V gallium nitride (GaN) field-effect transistors (FET). This release marks a significant advancement, particularly for the space industry, as it offers enhanced power efficiency for various space missions. The TPS7H6xxx family of gate drivers provides a wide range of gate drive voltages from 22V to 200V, catering to different radiation levels to optimize power efficiency across diverse space applications.
Engineers now have access to pin-to-pin compatible ceramic and plastic packaging options for the devices, supporting three voltage levels. This versatility allows for streamlined design processes when creating satellite power systems for a variety of space missions, all from a single chip supplier. Notably, this family includes the first space-qualified 200V gate drive in the industry, further solidifying its importance in space technology advancements.
GaN FETs have gained popularity in satellite and space designs due to their ability to operate at higher frequencies, resulting in smaller magnetics and reduced weight and size of power systems. With an efficiency exceeding 99%, these FETs also contribute to minimizing the size and weight of thermal management systems, crucial factors for system designers in the space industry.
The gate drivers within the TPS7H6xxx family are meticulously engineered to precisely drive GaN FETs with rapid rise and fall times, catering to higher frequency designs essential for power management from solar cells on spacecraft. The 200V GaN FET gate driver is well-suited for propulsion systems and input power conversion in solar panels, while the 60V and 22V versions are intended for power distribution and conversion throughout the satellite.
Furthermore, TI's radiation-hardened TPS7H5001-SP and radiation-tolerant TPS7H5005-SEP controller families offer a common power architecture for various circuits within an electrical power system across different missions and orbits. These families enable the integration of space-grade PWM controllers in multiple power-supply circuits across the satellite, enhancing overall system performance and reliability.
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TI's commitment to advancing space technology is further exemplified through the development of reference designs utilizing space-grade PWM controllers in power-supply circuits across satellites, including select payload boards. These designs encompass various configurations, such as an isolated flyback design and non-isolated high-current dual-phase buck design, both leveraging GaN FETs in the power stage to optimize performance.
“Satellites play a crucial role in numerous missions, from global internet coverage to climate monitoring, aiding in our understanding and navigation of the world,” stated Javier Valle, product line manager, Space Power Products at TI. “Our latest portfolio equips satellites in different earth orbits to withstand the harsh space environment while maintaining exceptional power efficiency for extended operational durations.”
The GaN FET gate drivers offered by TI come with packaging options tailored for the three voltage levels qualified for space applications, including Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, as well as Radiation-tolerant Space Enhanced Plastic (SEP) products. Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP, and TPS7H6005-SEP GaN gate drivers are currently available, with preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP also accessible.
By offering a comprehensive range of GaN gate drivers and supporting evaluation modules, reference designs, and simulation models, TI continues to drive innovation in space technology, empowering engineers to enhance the performance and efficiency of satellite power systems for a wide array of space missions.