Samsung Increases V-NAND Bit Density by 50%

With the industry's smallest cell size and thinnest mold, Samsung has made significant advancements in its 9th-generation V-NAND technology. The latest iteration boasts a 50% increase in bit density compared to the previous generation, thanks to innovations such as cell interference avoidance and cell life extension. By eliminating dummy channel holes, the planar area of the memory cells has been significantly reduced, leading to improved product quality and reliability.

According to SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics, the company is committed to meeting the evolving needs of the NAND flash market. Hur stated, "In order to address the evolving needs for NAND flash, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product." Samsung aims to set the trend for high-performance, high-density solid-state drives (SSDs) that cater to the demands of the AI generation.

Samsung's advanced "channel hole etching" technology is a testament to the company's leadership in process capabilities. This innovative technology enables the creation of electron pathways by stacking mold layers, maximizing fabrication productivity. By allowing simultaneous drilling of the industry's highest cell layer count in a double-stack structure, Samsung has demonstrated its commitment to pushing the boundaries of NAND flash technology.

The 9th-generation V-NAND comes equipped with the next-generation NAND flash interface, "Toggle 5.1," which supports increased data input/output speeds by 33% up to 3.2 Gbps. Samsung plans to solidify its position in the high-performance SSD market by expanding support for PCIe 5.0, offering customers enhanced performance and efficiency.

In response to the growing emphasis on energy efficiency, Samsung has improved power consumption by 10% through advancements in low-power design. As customers increasingly prioritize reducing energy usage and carbon emissions, the 9th-generation V-NAND is poised to meet the demands of future applications, making it an ideal choice for environmentally conscious consumers.

Samsung has already commenced mass production of the 1Tb TLC 9th-generation V-NAND this month, with plans to introduce the quad-level cell (QLC) model in the second half of the year. These developments underscore Samsung's commitment to innovation and leadership in the NAND flash market.